Infineon IRLR7807ZTRPBF
$ 1.75
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRLR7807ZTRPBF | 0 | 20 | Bulk | 16h | |||||||
| Farnell | IRLR7807ZTRPBF | 0 | 1 | Cut Tape | 9h | |||||||
| Win Source | WS-IRLR7807ZTRPBF | 1.000 | 145 | 36m | ||||||||
| Worldway Electronics | IRLR7807ZTRPBF | 3.275 | 7 | Tape & Reel | 23h | |||||||
| SHENGYU ELECTRONICS | IRLR7807ZTRPBF | 15.799 | 1 | 3d |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2003-04-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2019-11-15
LTD Date2020-05-15
Verwandte Teile
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Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 7.8A Ta 45A Tc 45A 50W 4ns
onsemiNTD50N03RG
Tube Surface Mount N-Channel Single Mosfet Transistor 7.8A Ta 45A Tc 45A 50W 6.8ns
STMicroelectronicsSTD40P3LLH6
P-channel -30 V, 12 mOhm typ., -40 A STripFET H6 Power MOSFET in a DPAK package
Beschreibungen
Beschreibungen von Infineon IRLR7807ZTRPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 30V 13.8 mOhm 7 nC HEXFET® Power Mosfet - TO-252AA
MOSFET, 30V, 43A, 13.8 MOHM, 7 NC QG, LOGIC LEVEL, D-PAK
30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 43A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance; Logic Level
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:43A; On Resistance, Rds(on):18.2mohm; Rds(on) Test Voltage, Vgs:20V; Package/Case:D-Pak ;RoHS Compliant: Yes
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Terminals2
Technical
Continuous Drain Current (ID)30 A
Current Rating43 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance13.8 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time3.5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance780 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation40 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance13.8 mΩ
Package Quantity2000
PackagingTape & Reel
Power Dissipation40 W
Rds On Max13.8 mΩ
Resistance13.8 MΩ
Rise Time28 ns
Turn-Off Delay Time9.8 ns
Turn-On Delay Time7.1 ns
Voltage Rating (DC)30 V
Dimensions
Height2.26 mm
Length6.7056 mm
Width6.22 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen