Infineon IRLML0030TRPBF
$ 0.153
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| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Avnet | IRLML0030TRPBF | 15.000 | 3K | 3d | ||||||||
| Newark | IRLML0030TRPBF | 30.856 | 1 | Cut Tape | ||||||||
| Arrow Electronics | IRLML0030TRPBF | 381.933 | 1 | |||||||||
| DigiKey | IRLML0030TRPBFCT-ND | 115.452 | 1 | Cut Tape | ||||||||
| Future Electronics | IRLML0030TRPBF | 0 | 3K | Tape & Reel |
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3-Monats-Trend: -3.81%
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2021-04-28
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
Verwandte Teile
InfineonIRLML6344TRPBF
Transistor: N-MOSFET; unipolar; 30V; 5A; 29ohm; 1.3W; -55+150 deg.C; SMD; SOT23
Diodes Inc.DMN3070SSN-7
Single N-Channel 30 V 50 mOhm 6 nC 0.78 W Silicon Surface Mount Mosfet - SOT-23
Beschreibungen
Beschreibungen von Infineon IRLML0030TRPBF, die von den Distributoren bereitgestellt werden.
Transistor: N-MOSFET; unipolar; 30V; 5.3A; 27ohm; 1.3W; -55+150 deg.C; SMD; SOT23
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
MOSFET N-CH 30V 5.3A SOT-23-3 / Trans MOSFET N-CH 30V 5.3A 3-Pin SOT-23 T/R
Single N-Channel 30 V 40 mOhm 2.6 nC HEXFET® Power Mosfet - SOT-23
Transistor MOSFET N-Ch. 5,2A/30V SOT23 IRLML0030TRPBF
Power MOSFET, N Channel, 30 V, 5.3 A, 0.027 ohm, SOT-23, Surface Mount
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
30V 5.3A 1.3W 27m´Î@10V5.2A 2.3V@25Ã×A N Channel SOT-23(SOT-23-3) MOSFETs ROHS
Power Field-Effect Transistor, 5.3A I(D), 30V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:5.3A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.027ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes
MOSFET, N CH, 30V, 5.3A, SOT23-3; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):22mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:1.3W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:5.3A; Power Dissipation Pd:1.3W; Voltage Vgs Max:20V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
N-Channel MOSFET, 30V drain-source voltage, 5.3A continuous drain current, and 0.027 ohm on-resistance. Features a 1.7V nominal gate-source voltage and 1.7V threshold voltage. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.3W. Packaged in a compact SOT-23 (TO-236AB) surface-mount case, this silicon metal-oxide semiconductor FET is HALOGEN FREE and ROHS COMPLIANT. Includes 5.2ns turn-on and 7.4ns turn-off delay times.
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -3.81%
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Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageSOT-23-3
MountSurface Mount
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)5.3 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance27 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4.4 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance382 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.3 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.7 V
Number of Channels1
Number of Elements1
On-State Resistance27 mΩ
Package Quantity3000
PackagingTape & Reel
Power Dissipation1.3 W
Rds On Max27 mΩ
Recovery Time17 ns
Resistance27 MΩ
Rise Time4.4 ns
Schedule B8541290080
Threshold Voltage1.7 V
Turn-Off Delay Time7.4 ns
Turn-On Delay Time5.2 ns
Dimensions
Height1.12 mm
Length3.0226 mm
Width1.397 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen