Infineon IRL2703PBF

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 0.04Ohm;ID 24A;TO-220AB;PD 45W;VGS +/-16V

MOSFET N-CH 30V 24A TO220AB N-Channel 30 V 24A (Tc) 45W (Tc) Through Hole TO-220AB

30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Single N-Channel 30 V 0.06 Ohm 15 nC HEXFET® Power Mosfet - TO-220-3

MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: N Power dissipation: 45 W

Trans MOSFET N-CH 30V 24A 3-Pin(3+Tab) TO-220AB

HEXFET Power MOSFET Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, 30V, 24A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:24A; Drain Source Voltage Vds:30V; On Resistance Rds(on):400mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:45W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:24A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:3.3°C/W; No. of Transistors:1; Package / Case:TO-220AB; Power Dissipation Pd:45W; Power Dissipation Pd:45W; Pulse Current Idm:96A; Termination Type:Through Hole; Voltage Vds Typ:30V; Voltage Vgs Max:1V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Min:1V