Infineon IRL1404SPBF
$ 3.75
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-04-30
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Verwandte Teile
InfineonAUIRFS8407
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
InfineonIRFS7437PBF
Trans MOSFET N-CH Si 40V 250A 3-Pin(2+Tab) D2PAK Tube / MOSFET N CH 40V 195A D2PAK
VishaySQM120N04-1M9_GE3
VISHAY SQM120N04-1M9-GE3MOSFET Transistor, N Channel, 120 A, 40 V, 0.0015 ohm, 10 V, 3 V
Beschreibungen
Beschreibungen von Infineon IRL1404SPBF, die von den Distributoren bereitgestellt werden.
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 40V 160A 3-Pin(2+Tab) D2PAK Tube
MOSFET, 40V, 160A, 4 MOHM, 93.3 NC QG, LOGIC LEVEL, D2-PAK
Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, 40V, 160A, D2-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:160A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:3.8W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:160A; Junction to Case Thermal Resistance A:0.75°C/W; On State resistance @ Vgs = 10V:4mohm; Package / Case:D2-PAK; Power Dissipation Pd:3.8W; Power Dissipation Pd:3.8W; Pulse Current Idm:640A; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:3V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:3V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)160 A
Current Rating160 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance4 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance6.6 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation200 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Nominal Vgs3 V
Number of Elements1
On-State Resistance4 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max4 mΩ
Resistance4 mΩ
Rise Time270 ns
Threshold Voltage3 V
Turn-Off Delay Time38 ns
Turn-On Delay Time18 ns
Voltage Rating (DC)40 V
Dimensions
Height4.703 mm
Length10.67 mm
Width9.65 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen