Infineon IRG4PSC71KPBF
$ 4.6
Obsolete
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1998-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-06-30
LTD Date2018-12-31
Verwandte Teile
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Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
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InfineonIRGP4063DPBF
600V UltraFast Copack Trench IGBT in a TO-247AC package for apliance motion applications
Beschreibungen
Beschreibungen von Infineon IRG4PSC71KPBF, die von den Distributoren bereitgestellt werden.
Trans IGBT Chip N-CH 600V 85A 350000mW 3-Pin(3+Tab) TO-274AA Tube
Bulk Through Hole N-CHANNEL Single IGBT Transistor 2.3V @ 15V 60A 200A 350W 54ns
600V UltraFast 8-25 kHz Discrete IGBT in a TO-274AA package
Insulated Gate Bipolar Transistor, 85A I(C), 600V V(BR)CES, N-Channel, TO-274AA
IRG4PSC71K Series 600 V 60 A Insulated Gate Bipolar Transistor - TO-247
Igbt Discretes Rohs Compliant: Yes
Target Applications: Refridgeration
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V,Vce(on)typ.=1.83V, @Vge=15V, Ic=60A) | IGBT 600V 85A 350W SUPER247
IGBT, 600V, 85A, TO-274AA; DC Collector Current:85A; Collector Emitter Voltage Vces:2.3V; Power Dissipation Pd:350W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:Super-247; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Ic Continuous a Max:85A; Current Temperature:25°C; Fall Time Max:133ns; Fall Time tf:133ns; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:Super-247; Power Dissipation Max:350W; Power Dissipation Pd:350W; Pulsed Current Icm:200A; Rise Time:54ns; Short Circuit Withstand Time Min:10µs; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage2.2 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current85 A
Current Rating85 A
Element ConfigurationSingle
Fall Time133 ns
Max Collector Current85 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation350 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation350 W
Rise Time54 ns
Turn-Off Delay Time251 ns
Turn-On Delay Time34 ns
Voltage Rating (DC)600 V
Dimensions
Height25.05 mm
Length16.0782 mm
Width5.5 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen