Infineon IRFU2607ZPBF
$ 3.12
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-12-21
Lifecycle StatusObsolete (Last Updated: 6 months ago)
LTB Date2014-10-25
LTD Date2015-04-25
Verwandte Teile
InfineonIRFU2307ZPBF
MOSFET N-CH 75V 42A IPAK N-Channel 75 V 42A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)
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MOSFET N-CH 55V 44A IPAK N-Channel 55 V 44A (Tc) 107W (Tc) Through Hole IPAK (TO-251AA)
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MOSFET N-CH 60V 43A IPAK N-Channel 60 V 43A (Tc) 71W (Tc) Through Hole IPAK (TO-251AA)
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MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.065Ohm;ID -31A;I-Pak (TO-251AA);PD 110W
Beschreibungen
Beschreibungen von Infineon IRFU2607ZPBF, die von den Distributoren bereitgestellt werden.
MOSFET N-CH 75V 42A IPAK N-Channel 75 V 42A (Tc) 110W (Tc) Through Hole IPAK (TO-251AA)
MOSFET, N Ch., Automotive, 75V, 45A, 22 MOHM, 34 NC QG, I-PAK, Pb-Free
MOSFET N-CH 75V 42A I-PAK / Trans MOSFET N-CH Si 75V 45A 3-Pin(3+Tab) IPAK
Power Field-Effect Transistor, 42A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
MOSFET, N-CH, 75V, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:45A; Drain Source Voltage Vds:75V; On Resistance Rds(on):17.6mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:110W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:1440pF; Current Id Max:42A; Package / Case:IPAK; Power Dissipation Pd:110W; Power Dissipation Pd:110W; Pulse Current Idm:180A; Reverse Recovery Time trr Typ:30ns; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageTO-251-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)42 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance22 mΩ
Drain to Source Voltage (Vdss)75 V
Dual Supply Voltage75 V
Fall Time28 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.44 nF
Max Operating Temperature150 °C
Max Power Dissipation110 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation110 W
Rds On Max22 mΩ
Recovery Time27 ns
Reverse Recovery Time30 ns
Rise Time59 ns
TerminationThrough Hole
Threshold Voltage2 V
Turn-Off Delay Time39 ns
Turn-On Delay Time14 ns
Dimensions
Height6.22 mm
Length6.7056 mm
Width2.3876 mm