Infineon IRFU220NPBF

Single N-Channel 200 V 600 mOhm 23 nC 4HEXFET® Power Mosfet - TO-251

Power MOSFET(Vdss=200V, Rds(on)max=600mohm, Id=5.0A) | MOSFET N-CH 200V 5A I-PAK

200V Single N-Channel HEXFET Power MOSFET in a I-Pak package, IPAK-3, RoHS

MOSFET, 200V, 5A, 600 mOhm, 15 nC Qg, I-Pak

Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA

43W(Tc) 20V 4V@ 250¦ÌA 23nC@ 10 V 1individualNChannel 200V 600m¦¸@ 2.9A,10V 5A 300pF@25V IPAK£¬TO-251AA Through hole mounting 6.6mm*2.3mm*8.5mm

MOSFET, N, 200V, 5A, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:200V; On Resistance Rds(on):600mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:43W; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:I-PAK; Current Id Max:5A; Junction to Case Thermal Resistance A:3.5°C/W; On State resistance @ Vgs = 10V:600ohm; Package / Case:IPAK; Power Dissipation Pd:43W; Power Dissipation Pd:43W; Pulse Current Idm:20A; Termination Type:Through Hole; Turn Off Time:12ns; Turn On Time:11ns; Voltage Vds Typ:200V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.