Infineon IRFS7540PBF
$ 1.29
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: +0.00%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
1 Teil verfügbar
Alternative Teile
Dieser Teil
Alternative Teile
Price @ 1000
$ 1.29
$ 0.905
Stock
33,959
175,143
Authorized Distributors
2
6
Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
Drain to Source Voltage (Vdss)
60 V
60 V
Continuous Drain Current (ID)
110 A
110 A
Threshold Voltage
-
3.7 V
Rds On Max
5.1 mΩ
5.1 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
160 W
160 W
Input Capacitance
4.555 nF
4.555 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2014-01-16
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
InfineonIRFS7540TRLPBF
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
InfineonAUIRFS3306TRL
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package, D2PAK-3, RoHS
InfineonIPB90N06S404ATMA2
MOSFET N-CH 60V 90A D2PAK / N-Channel 60 V 90A (Tc) 150W (Tc) Surface Mount PG-TO263-3
VishaySQM110N05-06L_GE3
SQM110N05-06L Series 55 V 110 A Automotive N-Channel Mosfet - TO-263-3
STMicroelectronicsSTB130N6F7
N-channel 60 V, 4.2 mOhm typ., 80 A STripFET F7 Power MOSFET in D2PAK package
Beschreibungen
Beschreibungen von Infineon IRFS7540PBF, die von den Distributoren bereitgestellt werden.
60V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Single N-Channel 60 V 5.1 mOhm 88 nC HEXFET® Power Mosfet - D2PAK
Trans MOSFET N-CH 60V 110A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: +0.00%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
1 Teil verfügbar
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight3.949996 g
Technical
Continuous Drain Current (ID)110 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance5.1 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time56 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.555 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation160 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance5.1 mΩ
Package Quantity1000
Power Dissipation160 W
Rds On Max5.1 mΩ
Rise Time76 ns
Schedule B8541290080
Turn-Off Delay Time58 ns
Turn-On Delay Time12 ns
Dimensions
Height5.084 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen