Infineon IRFS4115-7PPBF

150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
$ 4.74
Obsolete
HerstellerseiteDatenblatt

Preis und Lagerbestand

Alle Preisnachlässe anzeigen
DistributorSKUMinPkg
RS (Formerly Allied Electronics)IRFS4115-7PPBF0200Bulk
16h
FarnellIRFS4115-7PPBF01
10h
Microchip USAIRFS4115-7PPBF321150Tray
17h
Win SourceWS-IRFS4115-7PPBF4.76821
1h
Worldway Electronics
2
IRFS41157PPBF13.7577
1d

Datenblätter und Dokumente

Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRFS4115-7PPBF herunter.

IHS

Datasheet9 SeitenVor 17 Jahren
Datasheet10 SeitenVor 17 Jahren

Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-11-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16

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Beschreibungen

Beschreibungen von Infineon IRFS4115-7PPBF, die von den Distributoren bereitgestellt werden.

150V Single N-Channel HEXFET Power MOSFET in a 7-Pin D2-Pak package, D2PAK7P, RoHS
Infineon SCT
MOSFET, 150V, 105A, 11.8 mOhm, 73 nC Qg, D2PAK-7
RS (Formerly Allied Electronics)
Trans MOSFET N-CH 150V 105A 7-Pin(6+Tab) D2PAK Tube
Avnet
MOSFET Operating temperature: -55...+175 °C Housing type: D2PAK-7 Polarity: N Power dissipation: 380 W
Distrelec
HEXFET POWER MOSFET Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB
ComSIT Distribution GmbH
MOSFET, N-CH 150V 105A D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:63A; Drain Source Voltage Vds:150V; On Resistance Rds(on):11.8mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:380W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:7; SVHC:No SVHC (20-Jun-2011); Current Id Max:105A; Package / Case:D2-PAK-7; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V
element14 APAC
Benefits: RoHS Compliant; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability | Target Applications: Battery Operated Drive
Infineon

Bilder

Infineon
Distrelec
element14 APAC
Newark
RS (Formerly Allied Electronics)
TME
TME

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Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • IRFS41157PPBF