Infineon IRFS3004PBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
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Trend in der Bestandsentwicklung nicht verfügbar
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Price @ 1000
$ 3.77
$ 3.77
Stock
18,513
177,067
177,067
Authorized Distributors
0
2
2
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
D2PAK
D2PAK
D2PAK
Drain to Source Voltage (Vds)
40 V
40 V
40 V
Continuous Drain Current (ID)
195 A
195 A
195 A
Threshold Voltage
4 V
-
-
Rds On Max
1.75 mΩ
1.75 mΩ
1.75 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
380 W
380 W
380 W
Input Capacitance
9.2 nF
9.2 nF
9.2 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-02-26
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2016-11-16
LTD Date2017-05-16
Verwandte Teile
InfineonIRFS7434PBF
40V Single N-Channel HEXFET Power MOSFET in a Lead Free D2-Pak package, D2PAK-3, RoHS
InfineonAUIRFS8408
Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
InfineonAUIRFS8408-7P
Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
STMicroelectronicsSTH410N4F7-2AG
Automotive-grade N-channel Power MOSFET 40 V, 0.8 mOhm typ, 200 A STripFET F7 in an H2PAK-2 package
Beschreibungen
Beschreibungen von Infineon IRFS3004PBF, die von den Distributoren bereitgestellt werden.
40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 40V 340A 3-Pin(2+Tab) D2PAK Tube
Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
MOSFET, N CH, 40V, 340A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:195A; Drain Source Voltage Vds:40V; On Resistance Rds(on):1.75mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:340A; Driver Case Style:D2-PAK; Package / Case:D2-PAK; Power Dissipation Pd:380W; Power Dissipation Pd:380W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:40V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
Trend in der Bestandsentwicklung nicht verfügbar
CAD-Modelle
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1 Teil verfügbar
Technische Spezifikationen
Physical
Case/PackageD2PAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)195 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance1.75 mΩ
Drain to Source Voltage (Vds)40 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance9.2 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation380 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance1.75 mΩ
Package Quantity1000
Power Dissipation380 W
Rds On Max1.75 mΩ
Rise Time220 ns
Threshold Voltage4 V
Turn-Off Delay Time90 ns
Turn-On Delay Time23 ns
Dimensions
Height5.084 mm
Length10.67 mm
Width9.65 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCUnaffected
RoHSCompliant
Compliance-Erklärungen