Infineon IRFR9N20DPBF
$ 1.52
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2018-12-15
LTD Date2019-06-15
Verwandte Teile
Diodes Inc.DMN15H310SK3-13
MOSFET N-CH 150V 8.3A TO252 / N-Channel 150 V 8.3A (Tc) 32W (Ta) Surface Mount TO-252-3
Beschreibungen
Beschreibungen von Infineon IRFR9N20DPBF, die von den Distributoren bereitgestellt werden.
200V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
SMPS MOSFET Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
N CHANNEL MOSFET, 200V, 9.4A, D-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:9.4A; Drain Source Voltage Vds:200V; On Resistance Rds(on):380mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:86W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D-PAK; Current Id Max:9.4A; Junction to Case Thermal Resistance A:1.75°C/W; Package / Case:DPAK; Power Dissipation Pd:86W; Power Dissipation Pd:86W; Pulse Current Idm:38A; SMD Marking:IRFR9N20D; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)9.4 A
Current Rating9.4 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance380 mΩ
Drain to Source Voltage (Vdss)200 V
Dual Supply Voltage200 V
Element ConfigurationSingle
Fall Time9.3 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance560 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation86 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Elements1
On-State Resistance380 mΩ
Package Quantity3000
Power Dissipation86 W
Rds On Max380 mΩ
Rise Time16 ns
TerminationSMD/SMT
Threshold Voltage5.5 V
Turn-Off Delay Time13 ns
Turn-On Delay Time7.5 ns
Voltage Rating (DC)200 V
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen