Infineon IRFR6215TRLPBF
$ 0.561
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3-Monats-Trend: -23.77%
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-03-04
Lifecycle StatusProduction (Last Updated: 9 months ago)
Verwandte Teile
InfineonIRFR6215PBF
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
InfineonAUIRFR6215TRL
MOSFET P-CH 150V 13A DPAK P-Channel 150 V 13A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)
InfineonAUIRFR6215
MOSFET P-CH 150V 13A DPAK P-Channel 150 V 13A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)
Beschreibungen
Beschreibungen von Infineon IRFR6215TRLPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;P-Ch;VDSS -150V;RDS(ON) 0.295Ohm;ID -13A;D-Pak (TO-252AA);PD 110W
MOSFET P-CH 150V 13A DPAK P-Channel 150 V 13A (Tc) 110W (Tc) Surface Mount TO-252AA (DPAK)
Single P-Channel 150 V 580 mOhm 66 nC HEXFET® Power Mosfet - DPAK
-150V Single P-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS
Infineon SCT
Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-150V; Continuous Drain Current, Id:-13A; On Resistance, Rds(on):295mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:D-PAK ;RoHS Compliant: Yes
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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3-Monats-Trend: -23.77%
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Technische Spezifikationen
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage-150 V
Drain to Source Resistance295 mΩ
Drain to Source Voltage (Vds)-150 V
Fall Time37 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance860 pF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation110 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Elements1
On-State Resistance580 mΩ
Package Quantity3000
Power Dissipation110 W
Rds On Max295 mΩ
Rise Time36 ns
Schedule B8541290080
Turn-Off Delay Time53 ns
Turn-On Delay Time14 ns
Dimensions
Height2.3876 mm
Length6.7056 mm
Width6.22 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
Compliance-Erklärungen