Infineon IRFR4105ZPBF

MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 19 Milliohms;ID 30A;D-Pak (TO-252AA);PD 48W

Single N-Channel 55 V 24.5 mOhm 18 nC HEXFET® Power Mosfet - TO-252AA

55V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

HEXFET POWER MOSFET Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:55V; Continuous Drain Current, Id:30A; On Resistance, Rds(on):24.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:D-PAK ;RoHS Compliant: Yes

MOSFET, N, D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:55V; On Resistance Rds(on):24.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:48W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-252; Current Id Max:30A; Current Temperature:25°C; External Depth:10.5mm; External Length / Height:2.55mm; External Width:6.8mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:DPAK; Power Dissipation Pd:48W; Power Dissipation Pd:48W; Power Dissipation Ptot Max:48W; Pulse Current Idm:120A; SMD Marking:IRFR4105ZPBF; Termination Type:SMD; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V