Infineon IRFP064NPBF
$ 1.135
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3-Monats-Trend: -12.14%
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CAD-Modelle
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Price @ 1000
$ 1.135
$ 1.85
Stock
1,681,816
175,442
Authorized Distributors
6
3
Mount
Through Hole
Through Hole
Case/Package
TO-247-3
TO-247-3
Drain to Source Voltage (Vdss)
55 V
55 V
Continuous Drain Current (ID)
110 A
110 A
Threshold Voltage
4 V
2 V
Rds On Max
8 mΩ
8 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
Power Dissipation
150 W
200 W
Input Capacitance
4 nF
4 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1996-02-01
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
Verwandte Teile
InfineonIRFP054NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.012Ohm;ID 81A;TO-247AC;PD 170W;VGS +/-20V
InfineonIRFP048NPBF
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.016Ohm;ID 64A;TO-247AC;PD 140W;VGS +/-20V
Beschreibungen
Beschreibungen von Infineon IRFP064NPBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;N-Ch;VDSS 55V;RDS(ON) 0.008Ohm;ID 110A;TO-247AC;PD 200W;VGS +/-20V
Single N-Channel 55 V 8 mOhm 32 nC HEXFET® Power Mosfet - TO-247-3AC
In a Tube of 25, N-Channel MOSFET, 110 A, 55 V, 3-Pin TO-247AC Infineon IRFP064NPBF
55V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS
Infineon SCT
IRFP064NPBF,MOSFET, 55V, 98A, 8 MOHM, 113.3 NC QG, TO-247AC<
Transistor MOSFET N-CH 55V 98A 3-Pin TO-247AC Tube
Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
N Channel Mosfet, 55V, 110A, To-247Ac; Transistor Polarity:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.008Ohm; Transistor Mounting:Through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes |Infineon IRFP064NPBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.
MOSFET, N, 55V, 98A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:98A; Drain Source Voltage Vds:55V; On Resistance Rds(on):8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:110A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:1°C/W; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:TO-247AC; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:390A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 110 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 8 / Gate-Source Voltage V = 20 / Fall Time ns = 70 / Rise Time ns = 100 / Turn-OFF Delay Time ns = 43 / Turn-ON Delay Time ns = 14 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-247AC / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 200
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -12.14%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
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Technische Spezifikationen
Physical
Case/PackageTO-247-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)110 A
Current Rating110 A
Drain to Source Breakdown Voltage55 V
Drain to Source Resistance8 mΩ
Drain to Source Voltage (Vdss)55 V
Dual Supply Voltage55 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage55 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance8 mΩ
Package Quantity400
PackagingBulk
Power Dissipation150 W
Rds On Max8 mΩ
Recovery Time170 ns
Resistance8 MΩ
Rise Time100 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage4 V
Turn-Off Delay Time43 ns
Turn-On Delay Time14 ns
Voltage Rating (DC)55 V
Dimensions
Height24.99 mm
Lead Pitch5.45 mm
Length15.875 mm
Width5.3 mm
Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen