Infineon IRFL4315PBF

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 185 Milliohms;ID 2.6A;SOT-223;PD 2.8W;-55de

Single N-Channel 150 V 185 mOhm 12 nC HEXFET® Power Mosfet - SOT-223

150V Single N-Channel HEXFET Power MOSFET in a SOT-223 package, SOT223-4, RoHS

Trans MOSFET N-CH 150V 2.6A 4-Pin(3+Tab) SOT-223

Power Field-Effect Transistor, 2.6A I(D), 150V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET, N, 150V, 2.6A, SOT-223; Transistor Polarity:N Channel; Continuous Drain Current Id:2.6A; Drain Source Voltage Vds:150V; On Resistance Rds(on):185mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:2.8W; Transistor Case Style:SOT-223; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:45°C/W; On State resistance @ Vgs = 10V:185ohm; Package / Case:SOT-223; Power Dissipation Pd:2.8W; Power Dissipation Pd:2.8W; Pulse Current Idm:21A; Termination Type:SMD; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V