Infineon IRFHS8342TR2PBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-11-18
Lifecycle StatusObsolete (Last Updated: 5 months ago)
LTB Date2014-05-12
LTD Date2014-11-12
Verwandte Teile
InfineonIRFH8324TR2PBF
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InfineonIRFH8330TRPBF
30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS
Beschreibungen
Beschreibungen von Infineon IRFHS8342TR2PBF, die von den Distributoren bereitgestellt werden.
30V Single N-Channel HEXFET Power MOSFET in a 2mm X 2mm PQFN package
Trans MOSFET N-CH 30V 8.8A 6-Pin PQFN EP T/R
MOSFET N-Channel 30V 8.8A HEXFET PQFN6EP
HEXFET POWER MOSFET Power Field-Effect Transistor, 8.8A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET,N CH,30V,8.5A,PQFN22; Transistor Polarity:N Channel; Continuous Drain Current Id:8.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.13ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Current Id Max:8.8A; Power Dissipation Pd:2.1W; Voltage Vgs Max:20V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageQFN
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)8.8 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance600 pF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
Power Dissipation2.1 W
Rds On Max16 mΩ
Recovery Time17 ns
Rise Time15 ns
Threshold Voltage1.8 V
Turn-Off Delay Time5.2 ns
Turn-On Delay Time5.9 ns
Dimensions
Height950 µm
Length2.1 mm
Width2.1 mm
Compliance
Umweltklassifizierung
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen