Infineon IRFHM831TRPBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Vertriebspartner
SKU
Min.
Verpackung
Staffelpreise
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRFHM831TRPBF herunter.
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-07-21
Lifecycle StatusObsolete (Last Updated: 5 months ago)
Verwandte Teile
InfineonIPD060N03LGATMA1
N-Channel 30 V 50 A 6 mOhm Surface Mount OptiMOS Power-Transistor - PG-TO252-3
InfineonIPD50N03S207ATMA1
30V, N-Ch, 7.3 mΩ max, Automotive MOSFET, DPAK, OptiMOS™, PG-TO252-3, RoHS
Diodes Inc.DMN3010LK3-13
Mosfet, N-Ch, 30V, 43A, To-252 Rohs Compliant: Yes |Diodes Inc. DMN3010LK3-13
onsemiNTD70N03RT4G
Tape & Reel (TR) Surface Mount N-Channel Single Mosfet Transistor 10A Ta 32A Tc 75A 1.87W 1.3ns
Beschreibungen
Beschreibungen von Infineon IRFHM831TRPBF, die von den Distributoren bereitgestellt werden.
30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PG-TSDSON-8, RoHS
Infineon SCT
MOSFET, 30V, 24A, 7.8 MOHM, 7.3 NC QG, 0.9 OHM RG, PQFN 3.3X3.3
Trans MOSFET N-CH 30V 14A 8-Pin PQFN EP T/R
HEXFET POWER MOSFET Power Field-Effect Transistor, 14A I(D), 30V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
N CHAN MOSFET, 30V, 24A, 8-PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):6.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; No. of Pins:8;RoHS Compliant: Yes
MOSFET,N CH,DIODE,30V,14A,PQFN33; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):6600µohm; Rds(on) Test Voltage Vgs:10V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:QFN; No. of Pins:8; SVHC:No SVHC (15-Dec-2010); Current Id Max:14A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 4.7C/W); Low Profile (less than 1.0 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageTO-252-3
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)14 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance12.6 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time4.7 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.05 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation27 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance7.8 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation27 W
Rds On Max7.8 mΩ
Resistance12.6 MΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1.8 V
Turn-Off Delay Time6.2 ns
Turn-On Delay Time6.9 ns
Dimensions
Height990.6 µm
Length3.2766 mm
Width3.3 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRFHM831TRPBF herunter.
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen