Infineon IRFB33N15DPBF
$ 2.74
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
CAD-Modelle
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2000-04-17
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2020-10-31
LTD Date2021-04-30
Verwandte Teile
InfineonIRFB41N15DPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.045Ohm;ID 41A;TO-220AB;PD 200W;VGS +/-30V
InfineonIRFB52N15DPBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg
InfineonIRF3415PBF
MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 0.042Ohm;ID 43A;TO-220AB;PD 200W;VGS +/-20V
Beschreibungen
Beschreibungen von Infineon IRFB33N15DPBF, die von den Distributoren bereitgestellt werden.
Power MOSFET(Vdss=150V, Rds(on)max=0.056ohm, Id=33A) | MOSFET N-CH 150V 33A TO-220AB
Single N-Channel 150 V 56 mOhm 60 nC HEXFET® Power Mosfet - TO-220-3
150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Trans MOSFET N-CH 150V 33A 3-Pin(3+Tab) TO-220AB
HEXFET POWER MOSFET Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N CH MOSFET, 150V, 33A, TO-220AB; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:150V; On Resistance Rds(on):56mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:33A; Junction to Case Thermal Resistance A:0.9°C/W; On State resistance @ Vgs = 10V:56ohm; Package / Case:TO-220AB; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:130A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V
Benefits: RoHS Compliant; Industry-leading quality; Fully Characterized Avalanche Voltage and Current; Low Gate-to-Drain Charge to Reduce Switching Losses; Fully Characterized Capacitance Including Effective Coss to Simplify Design
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)33 A
Current Rating33 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance56 mΩ
Drain to Source Voltage (Vdss)150 V
Dual Supply Voltage150 V
Element ConfigurationSingle
Fall Time21 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.02 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation3.8 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Nominal Vgs5.5 V
Number of Channels1
Number of Elements1
On-State Resistance56 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation3.8 W
Rds On Max56 mΩ
Resistance56 Ω
Rise Time38 ns
Schedule B8541290080
Threshold Voltage5.5 V
Turn-Off Delay Time23 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)150 V
Dimensions
Height20.56 mm
Length10.5156 mm
Width4.69 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeContains Lead, Lead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen