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Price @ 1000
$ 0.542
$ 0.542
Stock
174,435
1,022,141
1,022,141
Authorized Distributors
2
3
3
Mount
Surface Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
SOIC
Drain to Source Voltage (Vdss)
-30 V
-30 V
-30 V
Continuous Drain Current (ID)
12 A
12 A
12 A
Threshold Voltage
-1.8 V
-1.8 V
-1.8 V
Rds On Max
11.9 mΩ
11.9 mΩ
11.9 mΩ
Gate to Source Voltage (Vgs)
20 V
20 V
20 V
Power Dissipation
2.5 W
2.5 W
2.5 W
Input Capacitance
1.68 nF
1.68 nF
1.68 nF
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-26
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Verwandte Teile
Beschreibungen
Beschreibungen von Infineon IRF9328PBF, die von den Distributoren bereitgestellt werden.
Trans MOSFET P-CH 30V 12A 8-Pin SOIC N Tube
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
Power Field-Effect Transistor, 12A I(D), 30V, 0.0119ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
MOSFET,P CH,30V,12A,SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-12A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):10mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-12A; Power Dissipation Pd:2.5W; Voltage Vgs Max:20V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance11.9 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time66 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.68 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Elements1
On-State Resistance11.9 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max11.9 mΩ
Recovery Time76 ns
Rise Time57 ns
Threshold Voltage-1.8 V
Turn-Off Delay Time80 ns
Turn-On Delay Time19 ns
Dimensions
Height1.4986 mm
Length4.9784 mm
Width3.9878 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen