Infineon IRF8308MTRPBF
$ 1.11
Obsolete
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Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-05-04
Lifecycle StatusObsolete (Last Updated: 4 months ago)
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Beschreibungen
Beschreibungen von Infineon IRF8308MTRPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 30 V 1.9 mOhm 42 nC HEXFET® Power Mosfet - DirectFET®
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 27 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
MOSFET, N-CH, 30V, 27A, DIRECTFET; Transistor Polarity:N Channel; Continuous Drain Current Id:27A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.8W; Operating Temperature Min:-40°C; Operating Temperature Max:150°C; Transistor Case Style:DirectFET MX; No. of Pins:7; MSL:MSL 3 - 168 hours; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-40°C to +150°C
Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins7
Number of Terminals3
Technical
Continuous Drain Current (ID)27 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance2.5 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time16 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.404 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Nominal Vgs1.8 V
Number of Elements1
On-State Resistance2.5 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation89 W
Rds On Max2.5 mΩ
Rise Time19 ns
Turn-Off Delay Time23 ns
Turn-On Delay Time11 ns
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen