Infineon IRF8010SPBF
$ 2.68
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-06-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2016-11-16
LTD Date2017-05-16
Verwandte Teile
InfineonIRF2807SPBF
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;D2Pak;PD 230W;VGS +/-20V
STMicroelectronicsSTB80NF10T4
N-Channel 100V - 0.012Ohm - 80A - D2PAK LOW GATE CHARGE STripFET(TM) MOSFET
Beschreibungen
Beschreibungen von Infineon IRF8010SPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 100 V 260 W 81 nC Hexfet Power Mosfet Surface Mount - D2PAK-3
MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;D2Pak;PD 260W;VGS +/-20
100V Single N-Channel HEXFET Power MOSFET in a D2Pak package, D2PAK-3, RoHS
Infineon SCT
Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK
SMPS MOSFET Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Benefits: RoHS Compliant; Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
N CHANNEL MOSFET, 100V, 80A, D2-PAK; Tra; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Transistor Case Style:D2-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:D2-PAK; Current Id Max:80A; Junction to Case Thermal Resistance A:0.57°C/W; On State resistance @ Vgs = 10V:15mohm; Package / Case:D2-PAK; Power Dissipation Pd:260W; Power Dissipation Pd:260W; Pulse Current Idm:320A; Termination Type:SMD; Voltage Vds:100V; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageD2PAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)75 A
Current Rating80 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance15 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Element ConfigurationSingle
Fall Time120 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.83 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature150 °C
Max Power Dissipation260 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance15 mΩ
Package Quantity1000
PackagingBulk
Power Dissipation260 W
Rds On Max15 mΩ
Resistance15 mΩ
Rise Time130 ns
Threshold Voltage4 V
Turn-Off Delay Time61 ns
Turn-On Delay Time15 ns
Voltage Rating (DC)100 V
Dimensions
Height5.084 mm
Length10.668 mm
Width9.65 mm
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen