Infineon IRF7343PBF

Transistor MOSFET N P Channel 55 Volt 4.7 Amp-3.4 Amp 8 Pin SOIC

Dual N/P-Channel 55 V 0.065/0.17 Ohm 36/38 nC HEXFET® Power Mosfet - SOIC-8

Trans MOSFET N/P-CH 55V 4.7A/3.4A 8-Pin SOIC

55V Dual N- and P- Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

HEXFET Power MOSFET Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

MOSFET, DUAL, NP, LOGIC, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4.7A; Drain Source Voltage Vds:55V; On Resistance Rds(on):50mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (18-Jun-2012); Cont Current Id N Channel 2:4.7A; Cont Current Id P Channel:3.4A; Current Id Max:4.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:2; On State Resistance N Channel Max:50mohm; On State Resistance P Channel Max:105mohm; Package / Case:SOIC; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:38A; Pulse Current Idm N Channel 2:38A; Pulse Current Idm P Channel:27A; Row Pitch:6.3mm; SMD Marking:F7343; Termination Type:SMD; Voltage Vds:2V; Voltage Vds N Channel 1:55V; Voltage Vds Typ:55V