Infineon IRF7205PBF

Transistor MOSFET P Channel 30 Volt 4.6 Amp 8 Pin SOIC

MOSFET, Power;P-Ch;VDSS -30V;RDS(ON) 0.07Ohm;ID -4.6A;SO-8;PD 2.5W;VGS +/-20V

Single P-Channel 30 V 0.13 Ohm 40 nC HEXFET® Power Mosfet - SOIC-8

Trans MOSFET P-CH 30V 4.6A 8-Pin SOIC Tube

-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS

HEXFET POWER MOSFET Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.

P Channel Mosfet, -30V, 4.6A, Soic; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4.6A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies IRF7205PBF

MOSFET, P, LOGIC, SO-8; Transistor Polarity:P Channel; Continuous Drain Current Id:4.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:-4.6A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:15A; SMD Marking:F7205; Termination Type:SMD; Voltage Vds:30V; Voltage Vds Typ:-30V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V