Infineon IRF6722MTRPBF
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6722MTRPBF | 0 | 4800 | Bulk | 20h | |||||||
| Avnet | IRF6722MTRPBF | 0 | 4800 | 10h | ||||||||
| Microchip USA | IRF6722MTRPBF | 318 | 300 | Bulk | 2h | |||||||
| Component Stockers USA | IRF6722MTRPBF | 12.237 | >1wk | |||||||||
| Worldway Electronics | IRF6722MTRPBF | 15.313 | 7 | Tape & Reel | 7h |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-11-12
Lifecycle StatusProduction (Last Updated: 1 month ago)
Verwandte Teile
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Beschreibungen
Beschreibungen von Infineon IRF6722MTRPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 30 V 7.7 mOhm 17 nC HEXFET® Power Mosfet - DirectFET®
A 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MP package rated at 13 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
N Channel, MOSFET, 30V, 14A, DirectFET SQ; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.051ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.9V ;RoHS Compliant: Yes
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)13 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7.7 mΩ
Drain to Source Voltage (Vdss)30 V
Fall Time6.1 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.3 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation42 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage30 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance7.7 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.3 W
Rds On Max7.7 mΩ
Rise Time7.8 ns
Turn-Off Delay Time9.5 ns
Turn-On Delay Time11 ns
Dimensions
Height676 µm
Length6.35 mm
Width5.05 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen