Infineon IRF6714MTRPBF
$ 0.979
Obsolete
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Nicht autorisierte Händler
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-09-21
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-05-15
LTD Date2023-11-15
Verwandte Teile
InfineonIRF6716MTRPBF
MOSFET N-CH 25V 39A DIRECTFET / Trans MOSFET N-CH Si 25V 39A 7-Pin Direct-FET MX T/R
STMicroelectronicsSTL150N3LLH6
MOSFET, N-CH, 30V, 150A, 150DEG C, 80W; Available until stocks are exhausted
Beschreibungen
Beschreibungen von Infineon IRF6714MTRPBF, die von den Distributoren bereitgestellt werden.
Single N-Channel 25 V 2.1 mOhm 44 nC HEXFET® Power Mosfet - DirectFET®
MOSET TRANSISTOR; Transistor Type:MOSFET ;RoHS Compliant: Yes
A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 29 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
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Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)29 A
Drain to Source Breakdown Voltage25 V
Drain to Source Resistance2.1 mΩ
Drain to Source Voltage (Vdss)25 V
Fall Time9.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.89 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation89 W
Manufacturer Package IdentifierMG-WDSON-5
Min Breakdown Voltage25 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance2.1 mΩ
Package Quantity4800
PackagingTape & Reel
Power Dissipation2.8 W
Rds On Max2.1 mΩ
Resistance2.1 MΩ
Rise Time26 ns
Schedule B8541290080
Turn-Off Delay Time13 ns
Turn-On Delay Time18 ns
Dimensions
Height700 µm
Length6.35 mm
Width5.05 mm
Compliance
Umweltklassifizierung
China RoHSCompliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen