Infineon IRF6614TR1PBF
$ 2.36
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF6614TR1PBF | 0 | 1K | Bulk | 1d | |||||||
| Farnell | IRF6614TR1PBF | 0 | 1 | Cut Tape | 22h | |||||||
| Component Stockers USA | IRF6614TR1PBF | 402 | >1wk | |||||||||
| Win Source | WS-IRF6614TR1PBF | 11.810 | 4 | 1d | ||||||||
| Worldway Electronics | IRF6614TR1PBF | 14.891 | 7 | Tape & Reel | 22h |
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2004-11-08
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2014-06-20
LTD Date2014-12-20
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Beschreibungen
Beschreibungen von Infineon IRF6614TR1PBF, die von den Distributoren bereitgestellt werden.
MOSFET N-CH 40V 12.7A DIRECTFET / Trans MOSFET N-CH Si 40V 12.7A 7-Pin Direct-FET ST T/R
MOSFET, N-Ch, VDSS 40V, RDS(ON) 5.9 mOhm, ID 12.7A, DirectFET
MOSFET N-CH 40V 12.7A DIRECTFET
Power Field-Effect Transistor, 12.7A I(D), 40V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N, DIRECTFET, 40V, ST; Transistor Polarity:N Channel; Continuous Drain Current Id:12.7A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.1mW; Transistor Case Style:ST; No. of Pins:5; SVHC:No SVHC (18-Jun-2012); Base Number:6614; Current Id Max:10.1A; Package / Case:ST; Power Dissipation Pd:2.1mW; Pulse Current Idm:102A; SMD Marking:2.1; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:40V; Voltage Vgs Max:1.8V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.25V; Voltage Vgs th Min:1.35V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
MountSurface Mount
Number of Pins5
Number of Terminals3
Technical
Continuous Drain Current (ID)12.7 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance8.3 mΩ
Drain to Source Voltage (Vdss)40 V
Dual Supply Voltage40 V
Fall Time3.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.56 nF
Max Operating Temperature150 °C
Max Power Dissipation42 W
Min Breakdown Voltage40 V
Min Operating Temperature-40 °C
Nominal Vgs1.8 V
Number of Elements1
PackagingCut Tape
Rds On Max8.3 mΩ
Recovery Time23 ns
Rise Time27 ns
TerminationSMD/SMT
Threshold Voltage1.8 V
Turn-Off Delay Time18 ns
Turn-On Delay Time13 ns
Dimensions
Height508 µm
Length4.826 mm
Width3.95 mm
Compliance
Umweltklassifizierung
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen