Infineon IRF5851TRPBF
Obsolete
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| RS (Formerly Allied Electronics) | IRF5851TRPBF | 0 | 3K | Bulk | 23h | |||||||
| Farnell | IRF5851TRPBF | 0 | 1 | Cut Tape | 6h | |||||||
| Component Stockers USA | IRF5851TRPBF | 19.080 | 7d | |||||||||
| Win Source | WS-IRF5851TRPBF | 2.998 | 11 | 6h | ||||||||
| Worldway Electronics | IRF5851TRPBF | 16.511 | 7 | Tape & Reel | 10h |
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRF5851TRPBF herunter.
Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-09-02
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2012-01-08
LTD Date2012-07-08
Verwandte Teile
InfineonIRF5852TRPBF
MOSFET, Power;Dual N-Ch;VDSS 20V;RDS(ON) 0.09Ohm;ID 2.7A;TSOP-6;PD 0.96W;Qg 4nC
VishaySI3585CDV-T1-GE3
Trans MOSFET N/P-CH 20V 3.5A/1.9A 6-Pin TSOP T/R / MOSFET N/P-CH 20V 3.9A 6TSOP
Beschreibungen
Beschreibungen von Infineon IRF5851TRPBF, die von den Distributoren bereitgestellt werden.
MOSFET N/P-CH 20V 2.7A 6-TSOP / Trans MOSFET N/P-CH Si 20V 2.7A/2.2A 6-Pin TSOP T/R
20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package
Small Signal Field-Effect Transistor, 2.7A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, DUAL, NP, TSOP-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):135mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.25V; Power Dissipation Pd:960mW; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Application Code:LowR; Cont Current Id N Channel:2.7A; Cont Current Id P Channel:2.2A; Current Id Max:2.7A; Junction to Case Thermal Resistance A:62.5°C/W; On State Resistance Channel 1:90mohm; On State Resistance P Channel 2:135mohm; Package / Case:TSOP; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:9A; Pulse Current Idm N Channel:11A; Pulse Current Idm P Channel:9A; Termination Type:SMD; Voltage Vds N Channel 1:20V; Voltage Vds P Channel 1:20V; Voltage Vds Typ:20V; Voltage Vgs Max:1.25V; Voltage Vgs Rds on Measurement:4.5V
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Technische Spezifikationen
Physical
Case/PackageTSOP
MountSurface Mount
Number of Pins6
Number of Terminals6
Technical
Continuous Drain Current (ID)2.7 A
Drain to Source Breakdown Voltage20 V
Drain to Source Resistance90 mΩ
Drain to Source Voltage (Vdss)20 V
Dual Supply Voltage20 V
Gate to Source Voltage (Vgs)12 V
Input Capacitance400 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation960 mW
Min Breakdown Voltage20 V
Min Operating Temperature-55 °C
Nominal Vgs1.25 V
Number of Channels2
Number of Elements2
PackagingCut Tape
Power Dissipation960 mW
Rds On Max90 mΩ
Resistance90 mΩ
TerminationSMD/SMT
Threshold Voltage1.25 V
Dimensions
Height1.1 mm
Length3 mm
Width1.5 mm
Datenblätter und Dokumente
Laden Sie Datenblätter und Herstellerdokumentation für Infineon IRF5851TRPBF herunter.
Compliance
Umweltklassifizierung
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCYes
RoHSCompliant
Compliance-Erklärungen