Infineon IRF5803TRPBF

-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package, TSOP6L, RoHS

MOSFET, P-CHANNEL, -40V, -3.4A, 112 MOHM, 25 NC QG, TSOP-6

Single P-Channel 40 V 190 mOhm 37 nC HEXFET® Power Mosfet - TSOP-6

Power Field-Effect Transistor, 3.4A I(D), 40V, 0.112ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA

Transistor Polarity:p Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:3.4A; On Resistance Rds(On):0.112Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Product Range:-Rohs Compliant: Yes

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

MOSFET,P,40V,3.4A,TSOP6; Transistor Polarity:P Channel; Continuous Drain Current Id:3.4A; Drain Source Voltage Vds:40V; On Resistance Rds(on):112mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:-3V; Power Dissipation Pd:2W; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Application Code:LowR; Cont Current Id @ 25°C:3.4A; Cont Current Id @ 70°C:2.7; Current Id Max:-3.4A; Junction to Case Thermal Resistance A:62.5°C/W; Package / Case:TSOP; Power Dissipation Pd:2W; Power Dissipation Pd:2W; Pulse Current Idm:27A; Termination Type:SMD; Voltage Vds:40V; Voltage Vds Typ:-40V; Voltage Vgs Max:-3V; Voltage Vgs Rds on Measurement:-10V