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InfineonIRF540NLPBF

Price @ 1000

$ 1.321

Stock

387,444

Authorized Distributors

Mount

Through Hole

Case/Package

TO-262-3

Drain to Source Voltage (Vdss)

100 V

Continuous Drain Current (ID)

33 A

Threshold Voltage

4 V

Rds On Max

44 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

130 W

Input Capacitance

1.96 nF

Lieferkette

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date1996-04-01

Lifecycle StatusObsolete (Last Updated: 1 month ago)

Beschreibungen

Beschreibungen von Infineon IRF540NLPBF, die von den Distributoren bereitgestellt werden.

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 44Milliohms;ID 33A;TO-262;PD 130W;VGS +/-2

RS (Formerly Allied Electronics)

Single N-Channel 100 V 44 mOhm 71 nC HEXFET® Power Mosfet - TO-262-3

Future Electronics

MOSFET N-CH 100V 33A TO262 N-Channel 100 V 33A (Tc) 130W (Tc) Through Hole TO-262

Eurochip Technologies LTD

Power Field-Effect Transistor, 33A I(D),; |Infineon Technologies IRF540NLPBF

Newark

100V Single N-Channel HEXFET Power MOSFET in a TO-262 package, TO262-3, RoHS

Infineon SCT

Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA

Semicontronic

Infineon NChannel EnhancedMOSTube HEXFETseries, Vds=100 V, 33 A, I2PAK (TO-262)encapsulation, Through hole mounting, 3Pin

UnikeyIC

Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature

Infineon

N CHANNEL MOSFET, 100V, 33A, TO-262; Tra; N CHANNEL MOSFET, 100V, 33A, TO-262; Transistor Polarity:N Channel; Continuous Drain Current Id:33A; Drain Source Voltage Vds:100V; On Resistance Rds(on):44mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. of Pins:3

element14 APAC

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 33 / Drain-Source Voltage (Vds) V = 100 / ON Resistance (Rds(on)) mOhm = 44 / Gate-Source Voltage V = 20 / Fall Time ns = 35 / Rise Time ns = 35 / Turn-OFF Delay Time ns = 39 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = I2PAK / Pins = 3 / Mounting Type = Through Hole / MSL = Level-1 / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 130

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Bilder

Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

Infineon Technologies
INF
INFINEO
INFINE
INFIN
INFINION
INFI
INFENION
SIM
INFIEON
INFINEON TECH
INFINEN
IFX
INFIENON
IR/INFINEON
INFINEON/IR
IFT
INFINEON/SIEMENS
LNFINEON
INFN
Infineon Tech ICs
INFINEON TECHNOLOGIE
NFINEON
INFINEON/Infineon
INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

IRF540NL
IRF540NLPBF.
SP001571292

Bestandsverlauf

3-Monats-Trend: -1.19%

CAD-Modelle

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Technische Spezifikationen

Physical

Case/PackageTO-262-3

MountThrough Hole

Number of Pins3

Number of Terminals3

Technical

Continuous Drain Current (ID)33 A

Current Rating33 A

Drain to Source Breakdown Voltage100 V

Drain to Source Resistance44 mΩ

Drain to Source Voltage (Vdss)100 V

Fall Time35 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance1.96 nF

Max Junction Temperature (Tj)175 °C

Max Operating Temperature175 °C

Max Power Dissipation130 W

Min Breakdown Voltage100 V

Min Operating Temperature-55 °C

Nominal Vgs4 V

Number of Channels1

Number of Elements1

On-State Resistance44 mΩ

Package Quantity1000

PackagingBulk

Power Dissipation130 W

Rds On Max44 mΩ

Resistance44 MΩ

Rise Time35 ns

Threshold Voltage4 V

Turn-Off Delay Time39 ns

Turn-On Delay Time11 ns

Voltage Rating (DC)100 V

Dimensions

Height15.1 mm

Length10.668 mm

Width4.826 mm