Beschreibungen von Infineon IRF5305PBF, die von den Distributoren bereitgestellt werden.
MOSFET, Power;P-Ch;VDSS -55V;RDS(ON) 0.06Ohm;ID -31A;TO-220AB;PD 110W;VGS +/-20V
Single P-Channel 55 V 0.06 Ohm 63 nC HEXFET® Power Mosfet - TO-220-3
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
Infineon SCT
Power MOSFET, P Channel, 55 V, 31 A, 0.06 ohm, TO-220AB, Through Hole
Trans MOSFET P-CH 55V 31A 3-Pin(3+Tab) TO-220AB Tube
277.8W 20V 4.5V@1.3mA 63nC(Max) @ 10V 1P 650V 110m¦¸@ 10V,12.7A 31.2A 1.2nF@ 25V TO-220
MOSFET Operating temperature: -55...175 °C Housing type: TO-220 Polarity: P Power dissipation: 110 W
HEXFET POWER MOSFET Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
P Channel Mosfet, -55V, 31A, To-220Ab; Channel Type:P Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:31A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRF5305PBF.
The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.