Infineon IPN70R600P7SATMA1

Transistor MOSFET N-CH 700V 8.5A 3-Pin SOT-223 T/R

Combining excellent performance and ease-of-use, PG-SOT223-4-3, RoHS

Infineon NMOS 700V CoolMOS P7, Vds=700 V, 8.5 A, SOT-223, , 3

Small Signal Field-Effect Transistor

Infineon MOSFET IPN70R600P7SATMA1

IPN70R600 - 650V AND 700V COOLMO

Mosfet, N-Ch, 700V, 8.5A, Sot-223; Channel Type:N Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:8.5A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies IPN70R600P7SATMA1

CoolMOS™ P7 superjunction (SJ) MOSFET is designed to address typical challenges in the low power SMPS market, by offering excellent performance and ease-of-use, enabling improved form factors and price competitiveness. The SOT-223 package is a cost effective one-to-one drop-in alternative to DPAK that also enables footprint reduction in some designs. It can be placed on a typical DPAK footprint and shows comparable thermal performance. This combination makes CoolMOS™ P7 in SOT-223 a perfect fit for its target applications.700V and 800V CoolMOS™ P7 are optimized for flyback topologies. 600V CoolMOS™ P7 SJ MOSFET is suitable for hard as well as so switching topologies (Flyback, PFC and LLC).