Infineon IPD50R650CEAUMA1

Mosfet Transistor, N Channel, 6.1 A, 500 V, 0.59 Ohm, 13 V, 3 V Rohs Compliant: Yes

Power Field-Effect Transistor, 6.1A I(D), 500V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

MOSFET, N-CH, 500V, 6.1A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.1A; Drain Source Voltage Vds: 500V; On Resistance Rds(on): 0.59ohm; Rds(on) Test Voltage Vgs: 13V; Threshold Voltage Vgs: 3V; P

500V CoolMOS™ CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards, PG-TO252-3, RoHS

500V CoolMOS CE is a price-performance optimized platform enabling to target cost sensitive applications in consumer and lighting markets by still meeting highest efficiency standards. The new series provides all benefits of a fast switching superjunction MOSFET while not sacrificing ease of use and offering the best cost down performance ratio available on the market. | Summary of Features: Reduced energy stored in output capacitance (E oss); High body diode ruggedness; Reduced reverse recovery charge (Q rr ); Reduced gate charge (Q g ) | Benefits: Easy control of switching behavior; Better light load efficiency compared to previous CoolMOS generations; Cost attractive alternative compared to standard MOSFETs; Outstanding quality and reliability of CoolMOS technology | Target Applications: Consumer; Lighting; PC silverbox