Infineon IPB80N04S2H4ATMA2

40V, N-Ch, 3.7 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™, PG-TO263-3, RoHS

Trans MOSFET N-CH 40V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Mosfet, N-Ch, 40V, 80A, To-263; Channel Type:N Channel; Drain Source Voltage Vds:40V; Continuous Drain Current Id:80A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Infineon Technologies IPB80N04S2H4ATMA2

Summary of Features: N-channel - Enhancement mode; Automotive AEC Q101 qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Ultra low Rds(on); 100% Avalanche tested; Green product (RoHS compliant) | Benefits: world's lowest RDS at 40V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: OptiMOS-T2 40V addresses all kind of EPS motor control, 3-phase and H-bridge motors, HVAC fan control, electric pumps, etc. especially in combination with PWM control.; Thus OptiMOS-T2 40V products based on Infineons advanced trench technology will be the benchmark for next generation of automotive applications in energy efficiency, CO2 reduction, e-drives.