Infineon IPA95R750P7XKSA1

MOSFET N-CH 950V 9A TO220 / N-Channel 950 V 9A (Tc) 28W (Tc) Through Hole PG-TO220-FP

Power Field-Effect Transistor, 9A I(D), 950V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950V CoolMOS™ P7 technology focuses on the low-power SMPS market, PG-TO220-3, RoHS

Mosfet, 950V, 9A, 150Deg C, 28W; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:950V; On Resistance Rds(On):0.64Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Infineon Technologies IPA95R750P7XKSA1

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest 950 V CoolMOS™ P7 technology focuses on the low-power SMPS market.Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th) of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.