Infineon IPA60R099C6XKSA1

Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220FP
Obsolete
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Datasheet18 SeitenVor 8 Jahren

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Lieferkette

Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-09-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-08-31
LTD Date2024-02-29

Verwandte Teile

MOSFET N-CH 650V 38A TO220 / N-Channel 650 V 38A (Tc) 35W (Tc) Through Hole PG-TO220-3-111
MOSFET, N CH, 600V, 47A, TO-247AC-3; Transistor Polarity:N Channel; Continuous D
MOSFET, N CH, 600V, 47A, TO-247AD-3; Transistor Polarity:N Channel; Continuous D
MOSFET, N CH, 600V, 47A, TO-247AC; Transistor Polarity:N Channel; Continuous Dra
Trans MOSFET N-CH 600V 30A 3-Pin(3+Tab) TO-220
Power MOSFET, N Channel, 650 V, 30 A, 125 Milliohms, TO-247, 3 Pins, Through Hole

Beschreibungen

Beschreibungen von Infineon IPA60R099C6XKSA1, die von den Distributoren bereitgestellt werden.

Trans MOSFET N-CH 600V 37.9A 3-Pin(3+Tab) TO-220FP
37.9 A 600 V 0.099 ohm N-CHANNEL Si POWER MOSFET TO-220AB
Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS
Infineon SCT
MOSFET, N-CH, 600V, 37.9A, TO220-FP; Transistor Polarity:N Channel; Continuous Drain Current Id:37.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.09ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:35W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220FP; No. of Pins:3; MSL:-; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +150°C
CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

Aliasnamen des Herstellers

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  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • IPA60R099C6
  • SP000658000