Infineon FZ900R12KP4HOSA1

Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel
$ 115.41
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DistributorSKUMinPkg
NewarkFZ900R12KP4HOSA1201
Rochester ElectronicsFZ900R12KP4HOSA12
2h
DigiKey448-FZ900R12KP4HOSA1-ND91Tray
AvnetFZ900R12KP4HOSA1010
4h
Future ElectronicsFZ900R12KP4HOSA1010Tray

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Infineon

Datasheet1 SeiteVor 14 Jahren

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Lieferkette

Country of OriginHungary
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-02-13
Lifecycle StatusProduction (Last Updated: 4 months ago)

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Beschreibungen

Beschreibungen von Infineon FZ900R12KP4HOSA1, die von den Distributoren bereitgestellt werden.

Insulated Gate Bipolar Transistor, 900A I(C), 1200V V(BR)CES, N-Channel
IHS
1200 V, 900 A 62mm C-Series module with Trench/Fieldstop IGBT4
Future Electronics
Our well-known 62 mm 1200 V single switch IGBT modules with IGBT4 are the right choice for your design, AG-62MM-2, RoHS
Infineon SCT
IGBT MODULE, 1.2KV, 900A, MODULE;
element14 APAC
Igbt, 1.2Kv, 900A, Module; Continuous Collector Current:900A; Collector Emitter Saturation Voltage:2.05V; Power Dissipation:-; Operating Temperature Max:150°C; Igbt Termination:Tab; Collector Emitter Voltage Max:1.2Kv Rohs Compliant: Yes |Infineon Technologies FZ900R12KP4HOSA1
Newark
Our well-known 62 mm 1200V single switch IGBT modules with IGBT4 are the right choice for your design. | Summary of Features: Superior solution for frequency controlled inverter drives; UL/CSA Certification with UL1557 E83336; Operating temperature up to 150 C; Optimized switching characteristic like softness and reduced switching losses; Existing packages with higher current capability; RoHS compliant | Benefits: Flexibility; Optimal electrical performance; Highest reliability | Target Applications: drives; solar; cav; ups; induction-heating; welding
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Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • FZ900R12KP4
  • SP000524484