Infineon BFR380FH6327XTSA1

RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN

9V 380mW 90@40mA,3V 80mA NPN TSFP-3 Bipolar Transistors - BJT ROHS

Bipolar 380mW 2V 30nA 15V 6V 80mA TSFP-3 1.2mm*800¦Ìm*550¦Ìm

Trans RF BJT NPN 6V 0.08A Automotive 3-Pin TSFP T/R

RF TRANSISTOR, NPN, 6V, 14GHZ, TSFP

RF Bipolar Transistors RF BIP TRANSISTOR

Infineon RF Bip Transisitor BFR 380F H63

Transistor Polarity = NPN / Continuous Collector Current (Ic) mA = 80 / Collector-Emitter Voltage (Vceo) V = 6 / DC Current Gain (hFE) = 120 / Collector-Base Voltage (Vcbo) V = 15 / Emitter-Base Voltage (Vebo) V = 2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 14 / Power Dissipation (Pd) mW = 380 / Package Type = SOT-723 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel

Transistor, RF TSFP3; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:6V; Transition Frequency Typ ft:9GHz; Power Dissipation Pd:380mW; DC Collector Current:80mA; DC Current Gain hFE:120; Operating Temperature Range:-65°C to +150°C; RF Transistor Case:TSFP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Associated Gain Ga:13.5dB; Continuous Collector Current Ic:80mA; Continuous Collector Current Ic Max:80mA; Current Ic Continuous a Max:80mA; Current Ic hFE:40mA; Gain Bandwidth ft Min:6GHz; Gain Bandwidth ft Typ:9GHz; Hfe Min:60; No. of Transistors:1; Noise Figure Typ:1.1dB; Output @ Third Order Intercept Point IP3:29dB; Package / Case:TSFP3; Power @ 1dB Gain Compression, P1dB:16dBm; Power Dissipation Ptot Max:380mW; SMD Marking:FCs; Termination Type:SMD; Test Frequency:1.8GHz; Transistor Case Style:TSFP; Voltage Vcbo:15V