Infineon BFP620H7764XTSA1

RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon Germanium, NPN
$ 0.271
NRND
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NewarkBFP620H7764XTSA14.2931Cut Tape
Arrow Electronics
4
BFP620H7764XTSA17761
DigiKey
3
BFP620H7764XTSA1CT-ND6.2871Cut Tape
AvnetBFP620H7764XTSA103K
17h
Future ElectronicsBFP620H7764XTSA103KTape & Reel

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IHS

Datasheet15 SeitenVor 7 Jahren

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Farnell

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Lieferkette

Country of OriginGermany, Mainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-05-01
Lifecycle StatusNRND (Last Updated: 3 weeks ago)
LTB Date2003-03-31
LTD Date2004-09-30

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Beschreibungen

Beschreibungen von Infineon BFP620H7764XTSA1, die von den Distributoren bereitgestellt werden.

RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, C Band, Silicon Germanium, NPN
Abacus Technologies
RF TRANSISTOR, SOT-343; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 2.3V; Transition Frequency ft: 65GHz; Power Dissipation Pd: 185mW; DC Collector Current: 80mA; DC Current Gain hFE: 180hFE; RF Transistor Ca
Farnell
Transistor Polarity = NPN / Continuous Collector Current (Ic) mA = 80 / Collector-Emitter Voltage (Vceo) V = 2.3 / DC Current Gain (hFE) = 180 / Collector-Base Voltage (Vcbo) V = 7.5 / Emitter-Base Voltage (Vebo) V = 1.2 / Operating Temperature Max. °C = 150 / Transit Frequency GHz = 65 / Power Dissipation (Pd) mW = 185 / Package Type = SOT-343 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel
Distrelec
Summary of Features: Highly linear low noise RF transistor; Provides outstanding performance for a wide range of wireless applications; Based on Infineon's reliable high volume SiGe:C technology; Ideal for CDMA and WLAN applications; Collector design provides high linearity of 14.5 dBm OP1dB for low voltage application; Maximum stable gain :Gms = 21.5 dB at 1.8 GHz ,Gma = 11 dB at 6 GHz; Outstanding noise figure NFmin = 0.7 dB at 1.8 GHz; Outstanding noise figure NFmin = 1.3 dB at 6 GHz; Accurate SPICE GP model enables effective design in process; Pb-free (RoHS compliant) package; Qualified according AEC Q101
Infineon
Transistor, RF SOT-343; Transistor Polarity:N Channel; Collector Emitter Voltage V(br)ceo:2.3V; Power Dissipation Pd:185mW; DC Collector Current:80mA; DC Current Gain hFE:180; Operating Temperature Range:-65°C to +150°C; No. of Pins:3; Associated Gain Ga:21.5dB; Continuous Collector Current Ic:80mA; Continuous Collector Current Ic Max:80mA; Current Ic Continuous a Max:80mA; Current Ic hFE:50mA; Gain Bandwidth ft Typ:65GHz; Hfe Min:110; No. of Transistors:1; Noise Figure Typ:0.7dB; Output @ Third Order Intercept Point IP3:25dB; Package / Case:TSFP4; Power @ 1dB Gain Compression, P1dB:15dBm; Power Dissipation Ptot Max:185mW; SMD Marking:R2s; Termination Type:SMD; Test Frequency:1.8GHz; Transistor Case Style:TSFP; Voltage Vcbo:7.5V
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Aliasnamen des Herstellers

Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:

  • Infineon Technologies
  • INF
  • INFINEO
  • INFINE
  • INFIN
  • INFINION
  • INFI
  • INFENION
  • SIM
  • INFIEON
  • INFINEON TECH
  • INFINEN
  • IFX
  • INFIENON
  • IR/INFINEON
  • INFINEON/IR
  • IFT
  • INFINEON/SIEMENS
  • LNFINEON
  • INFN
  • Infineon Tech ICs
  • INFINEON TECHNOLOGIE
  • NFINEON
  • INFINEON/Infineon
  • INFINEON TECHNOLOGIES (ASIA

Aliasnamen für Teilnummern

Dieses Teil ist möglicherweise auch unter diesen alternativen Teilenummern bekannt:

  • BFP 620 H7764
  • BFP-620-H7764
  • BFP620
  • BFP620 H7764
  • BFP620H7764
  • SP000745302