Infineon AIMW120R045M1XKSA1

Transistor Silicon Carbide MOSFET N-CH 1200V 52A 3-Pin TO-247 Tube

Trans MOSFET N-CH SiC 1.2KV 52A 3-Pin(3+Tab) TO-247 Tube Automotive AEC-Q101

Power Field-Effect Transistor, 52A I(D), 1200V, 0.059ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247

Sic Mosfet, N-Ch, 1.2Kv, 52A, To-247; Mosfet Module Configuration:Single; Channel Type:N Channel; Continuous Drain Current Id:52A; Drain Source Voltage Vds:1.2Kv; No. Of Pins:3Pins; Rds(On) Test Voltage:15V; Power Dissipation:228W Rohs Compliant: Yes |Infineon Technologies AIMW120R045M1XKSA1

The AIMW120R045M1 is specifically designed to meet the high requirements demanded by the automotive industry with regards to reliability, quality and performance.The increase of switching frequency for a converter using CoolSiC™ MOSFETs can result in dramatically reduced volume and weight of the magnetic components by up to 25%, which yields to significant cost increase of the application itself. The gain in performance fulfills new regulation standards in terms of higher efficiency requirements for electric vehicles. The superior gate oxide reliability as well as the best-in-class Infineon SiC Quality Extension guarantees very long and safe lifetime and can even fulfill very tough mission profile requirements. Further features such as lowest gate charge and device capacitances levels seen in 1200 V switches, no reverse recovery losses of the internal commutation proof body diode, temperature independent low switching losses and threshold-free on-state characteristics guarantee an hustle-free design-in and easy-to-control application design.