Infineon 2N6788
$ 20.07
Production
Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: -62.30%
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Lieferkette
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date1990-01-01
Lifecycle StatusProduction (Last Updated: 4 months ago)
Verwandte Teile
InfineonJANTX2N6788
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Beschreibungen
Beschreibungen von Infineon 2N6788, die von den Distributoren bereitgestellt werden.
Benefits: Hermetically packaged power MOSFET; Packaged on a MIL-PRF-19500 manufacturing line
Power Field-Effect Transistor, 6A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:6A; On Resistance, Rds(on):0.3ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-205AF ;RoHS Compliant: No
MOSFET, N, TO-39; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:100V; On Resistance Rds(on):300mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:20W; Transistor Case Style:TO-39; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Avalanche Single Pulse Energy Eas:76mJ; Current Id Max:6A; Current Temperature:25°C; External Length / Height:18.03mm; Full Power Rating Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Lead Length:14.22mm; No. of Transistors:1; Package / Case:TO-39; Power Dissipation Pd:20W; Power Dissipation Pd:20W; Pulse Current Idm:24A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Weight:0.0024kg
Aliasnamen des Herstellers
Infineon verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Infineon ist möglicherweise auch unter den folgenden Namen bekannt:
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
Bestandsverlauf
3-Monats-Trend: -62.30%
CAD-Modelle
Symbol, Footprint und 3D STEP herunterladen
Alternative Teile
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Technische Spezifikationen
Physical
Body MaterialMetal
Case/PackageTO-39
Contact PlatingLead, Tin
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.4 g
Technical
Continuous Drain Current (ID)6 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance300 mΩ
Drain to Source Voltage (Vdss)100 V
Dual Supply Voltage100 V
Gate to Source Voltage (Vgs)20 V
Max Operating Temperature150 °C
Max Power Dissipation20 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Elements1
On-State Resistance300 mΩ
Power Dissipation20 W
TerminationThrough Hole
Threshold Voltage4 V
Dimensions
Lead Length14.22 mm
Compliance
Umweltklassifizierung
Radiation HardeningNo
REACH SVHCYes
RoHSNon-Compliant
Compliance-Erklärungen