Diodes Inc. ZTX849
$ 0.58
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Preis und Lagerbestand
Autorisierte Distributoren
Nicht-autorisierte lagerhaltende Distributoren
Nicht autorisierte Händler
Bestandsverlauf
3-Monats-Trend: +27.09%
CAD-Modelle
0 models available
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1 Teil verfügbar
Datenblätter und Dokumente
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Price @ 1000
$ 0.58
$ 0.576
Stock
405,417
76,444
Authorized Distributors
5
4
Mount
Through Hole
Through Hole
Case/Package
TO-92
TO-92
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
Max Collector Current
5 A
5 A
Transition Frequency
100 MHz
100 MHz
Collector Emitter Saturation Voltage
220 mV
220 mV
hFE Min
30
30
Power Dissipation
1.2 W
1.2 W
Lieferkette
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1994-01-01
Lifecycle StatusEOL (Last Updated: 2 weeks ago)
LTB Date2026-10-28
LTD Date2027-04-28
Verwandte Teile
onsemiKSC2328AYTA
30V 1W 2A 120MHz 2V@1.5A30mA NPN +150¡Í@(Tj) TO-92-3LF Bipolar Transistors - BJT ROHS
onsemiKSD471ACYBU
Transistor, bjt, npn,30V V(Br)Ceo,1A I(C),to-92 Rohs Compliant: Yes |Onsemi KSD471ACYBU
Beschreibungen
Beschreibungen von Diodes Inc. ZTX849, die von den Distributoren bereitgestellt werden.
Power Bipolar Transistor, 5A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
ZTX849 Series NPN 5 A 30 V Silicon Planar Medium Power Transistor - TO-92-3
TRANSISTOR NPN 30V 5000MA TO92-3
220mV@ 200mA,5A NPN 1.2W 6V 50nA 80V 30V 5A EP-3SC , 4.77mm*2.41mm*4.01mm
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:1.2W; DC Collector Current:5A; DC Current Gain hFE:200; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:220mV; Continuous Collector Current Ic Max:5A; Current Ic @ Vce Sat:5A; Current Ic Continuous a Max:5A; Current Ic hFE:1A; Full Power Rating Temperature:25°C; Gain Bandwidth ft Typ:100MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:1.2W; Power Dissipation Ptot Max:1.2W; Pulsed Current Icm:20A; Termination Type:Through Hole; Voltage Vcbo:80V
Aliasnamen des Herstellers
Diodes Inc. verfügt über mehrere Marken auf der ganzen Welt, die von Händlern als alternative Namen verwendet werden können. Diodes Inc. ist möglicherweise auch unter den folgenden Namen bekannt:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
- Pericom
- Diodes Incorporated
Bestandsverlauf
3-Monats-Trend: +27.09%
CAD-Modelle
0 models available
Alternative Teile
1 Teil verfügbar
Technische Spezifikationen
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight453.59237 mg
Technical
Collector Base Voltage (VCBO)80 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage220 mV
Collector Emitter Voltage (VCEO)30 V
Continuous Collector Current5 A
Current Rating5 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)6 V
Frequency100 MHz
Gain Bandwidth Product100 MHz
hFE Min30
Max Collector Current5 A
Max Operating Temperature200 °C
Max Power Dissipation1.2 W
Manufacturer Package IdentifierE-Line
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1.2 W
Schedule B8541290080
Transition Frequency100 MHz
Voltage Rating (DC)30 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
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Compliance
Umweltklassifizierung
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo
RoHSCompliant
Compliance-Erklärungen