Diodes Inc. MMDT5451-7-F

Bipolar Transistor Array, Dual, Complementary NPN and PNP, 160 V, 160 V, 200 mA, 200 mA, 200 mW

MMDT5451 Series NPN/PNP 160 V 200 mW Small Signal Transistor SMT - SOT-363

Trans GP BJT NPN/PNP 160V 0.2A 200mW 6-Pin SOT-363 T/R / TRANS NPN/PNP 160V/150V SOT363

Small Signal Bipolar Transistor, 0.2A I(C), 160V V(BR)CEO, 2-Element, NPN and PNP, Silicon

General Purpose Transistors NPN,PNP Ic=200mA Vceo=160V,150V hfe=80~250/60~240 P=320mW SOT363

GP BJT NPN/PNP 160/150V 0.2A 6P SOT363 | Diodes Inc MMDT5451-7-F

DiodesZetex NPN/PNP, SOT-363 (SC-88), , 200 mA, -160 V

TRANSISTOR, NPN/PNP, SOT363; Transistor Polarity: NPN, PNP; Collector Emitter Voltage V(br)ceo: 160V; Power Dissipation Pd: 200mW; DC Collector Current: 200mA; DC Current Gain hFE: 80hFE; Transistor Case Style: SOT-363; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Collector Emitter Saturation Voltage Vce(on): 200mV; Current Ic Continuous a Max: 200mA; Gain Bandwidth ft Typ: 300MHz; Hfe Min: 80; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Small Signal

Transistor, Npn/Pnp, Sot363; Transistor, Polaridad:Npn, Pnp; Tensión Colector Emisor V(Br)Ceo:160V; Disipación De Potencia Pd:200Mw; Corriente De Colector Dc:200Ma; Ganancia De Corriente Dc Hfe:80; Núm. De Contactos:6 |Diodes Inc. MMDT5451-7-F