Diodes Inc. ZXMC4559DN8TA
In Stock
Price and Stock
Authorized Distributors
Non-Authorized Stocking Distributors
Non-Authorized Dealers
| Distributor | SKU | MOQ | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 8661233 | 500 | 500 | Tape & Reel | 10h | ||||||||
| 70550784 | 240 | 1 | Bulk | 3h | ||||||||
| ZXMC4559DN8TA | 300 | 1 | Cut Tape | 19h | ||||||||
| ZXMC4559DN8TA | 300 | 17 | 17h | |||||||||
| ZXMC4559DN8CT-ND | 729 | 1 | Cut Tape | 20h |
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)4.7 A
Current Rating4.7 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.063 nF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
Power Dissipation2.1 W
Rds On Max55 mΩ
Resistance105 mΩ
Rise Time4.1 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time35 ns
Turn-On Delay Time3.5 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Inventory History
3 month trend: +30.49%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Engineering Resources
View Evaluation kits and Reference designs for Diodes Inc. ZXMC4559DN8TA.
Related Parts
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Descriptions
Descriptions of Diodes Inc. ZXMC4559DN8TA provided by its distributors.
ZXMC4559DN8 Series 60 V 0.55 Ohm Dual N/P-Channel Enhancement Mode MOSFET SOIC-8
Trans MOSFET N/P-CH 60V 2.6A/3.6A Automotive 8-Pin SOIC T/R
Complem. 60V Enhancement MOSFET SOIC8 | Diodes Inc ZXMC4559DN8TA
MOSFET, N & P CHANNEL, DUAL, 60V, 4.7A, SOIC-8
MOSFET, DUAL, NP, 60V, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3.9A; Source Voltage Vds:60V; On Resistance
Small Signal Field-Effect Transistor, 3.6A I(D), 60V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N/P Variants: Enhancement mode Power dissipation: 1.25 W
MOSFET, DUAL, NP, 60V, SO-8; Transistor Polarity: N and P Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.105ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 2.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Drain Current Id, N Channel: 4.7A; Continuous Drain Current Id, P Channel: -3.9A; Current Id Max: 4.7A; Drain Source Voltage Vds, N Channel: 60V; Drain Source Voltage Vds, P Channel: -60V; Module Configuration: Dual; No. of Transistors: 2; On Resistance Rds(on), N Channel: 0.055ohm; On Resistance Rds(on), P Channel: 0.105ohm; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pin Configuration: 1(S1), 2(G1),3(S2),4(G2),5+6(D2),7+8(D1); Pulse Current Idm: 18.3A; Termination Type: Surface Mount Device; Voltage Vds Typ: 60V
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
Inventory History
3 month trend: +30.49%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageSOIC
MountSurface Mount
Number of Pins8
Weight73.992255 mg
Technical
Continuous Drain Current (ID)4.7 A
Current Rating4.7 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance75 mΩ
Drain to Source Voltage (Vdss)60 V
Dual Supply Voltage60 V
Element ConfigurationDual
Fall Time10 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.063 nF
Max Operating Temperature150 °C
Max Power Dissipation2.1 W
Min Operating Temperature-55 °C
Nominal Vgs1 V
Number of Channels2
Number of Elements2
Power Dissipation2.1 W
Rds On Max55 mΩ
Resistance105 mΩ
Rise Time4.1 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage1 V
Turn-Off Delay Time35 ns
Turn-On Delay Time3.5 ns
Dimensions
Height1.5 mm
Length5 mm
Width4 mm
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements