MOSFET, P, E-LINE; Transistor Polarity:P Channel; Continuous Drain Current Id:230mA; Drain Source Voltage Vds:100V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-3.5V; Power Dissipation Pd:700mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:230mA; Current Temperature:25°C; Device Marking:ZVP2110A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:700mW; Power Dissipation Pd:700mW; Power Dissipation Ptot Max:700mW; Pulse Current Idm:3A; Termination Type:Through Hole; Voltage Vds Typ:-100V; Voltage Vgs Max:-3.5V; Voltage Vgs Rds on Measurement:-10V