Diodes Inc. ZVN3306A

N-Channel 60 V 5 Ohm Enhancement Mode Vertical DMOS FET- TO-92

Price and Stock

Distributor		SKU		MOQ	Pkg
Future Electronics	2	5748298	8,000	1	Bag	0.325	0.325	0.325	0.305	0.275	3h
Arrow Electronics		ZVN3306A	3,975	1		0.576	0.519	0.399	0.296	0.238	1d
Verical		ZVN3306A	3,975	25				0.399	0.297	0.238	3h
DigiKey		ZVN3306A-ND	6,731	1	Bulk	0.780	0.672	0.465	0.331	0.279	3h
TME		ZVN3306A	3,735	1		0.797*	0.433*	0.341*	0.319*	0.319*	2d

Technical Specifications

Physical

Case/PackageTO-92-3

MountThrough Hole

Number of Pins3

Weight453.59237 mg

Technical

Continuous Drain Current (ID)270 mA

Current Rating270 mA

Drain to Source Breakdown Voltage60 V

Drain to Source Resistance5 Ω

Drain to Source Voltage (Vdss)60 V

Element ConfigurationSingle

Fall Time7 ns

Gate to Source Voltage (Vgs)20 V

Input Capacitance35 pF

Max Operating Temperature150 °C

Max Power Dissipation625 mW

Min Operating Temperature-55 °C

Number of Channels1

Number of Elements1

PackagingBulk

Power Dissipation625 mW

Rds On Max5 Ω

Resistance5 Ω

Rise Time7 ns

Schedule B8541210080

Threshold Voltage2.4 V

Turn-Off Delay Time6 ns

Turn-On Delay Time5 ns

Voltage Rating (DC)60 V

Dimensions

Height4.01 mm

Length4.77 mm

Width2.41 mm

Inventory History

3 month trend: +77.62%

CAD Models

Download symbol, footprint, and 3D STEP

Alternate Parts

1 part available

Documents

Download datasheets and manufacturer documentation for Diodes Inc. ZVN3306A.

Datasheet3 pages17 years ago

Newark

Datasheet3 pages17 years ago

Diodes Inc SCT

Technical Drawing4 pages7 years ago

Future Electronics

Datasheet6 pages9 years ago

Inventory History

3 month trend:

+77.62%

Alternate Parts

This Part

Alternate Parts

Diodes Inc.ZVN3306A

Diodes Inc.ZVN3306ASTZ

Price @ 1000

$ 0.318

$ 0.515

Stock

514,158

223,581

Authorized Distributors

Mount

Through Hole

Case/Package

TO-92-3

Drain to Source Voltage (Vdss)

60 V

Continuous Drain Current (ID)

270 mA

Threshold Voltage

2.4 V

Rds On Max

5 Ω

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

625 mW

Input Capacitance

35 pF

Engineering Resources

View Evaluation kits and Reference designs for Diodes Inc. ZVN3306A.

Related Parts

Descriptions

Descriptions of Diodes Inc. ZVN3306A provided by its distributors.

N-Channel 60 V 5 Ohm Enhancement Mode Vertical DMOS FET- TO-92

Future Electronics

N CHANNEL MOSFET, 60V, 270mA, TO-92

Component Sense

Trans MOSFET N-CH 60V 0.27A Automotive 3-Pin E-Line

Verical

Mosfet Bvdss: 41V~60V Ep3sc Bulk 4K Rohs Compliant: Yes

Newark

MOSFET N-Channel 60V 0.27A E-Line | Diodes Inc ZVN3306A

RS (Formerly Allied Electronics)

Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

Semicontronic

N-CHANNEL ENHANCEMENT MODE MOSFET, 20±V VGS

Diodes Inc SCT

French Electronic Distributor since 1988

ACDS

MOSFET, N, E-LINE; Transistor Polarity:N Channel; Continuous Drain Current Id:270mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.4V; Power Dissipation Pd:625mW; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:270mA; Current Temperature:25°C; Device Marking:ZVN3306A; Full Power Rating Temperature:25°C; Lead Spacing:1.27mm; No. of Transistors:1; Package / Case:E-Line; Power Dissipation Pd:625mW; Power Dissipation Pd:625mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:3A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:2.4V; Voltage Vgs Rds on Measurement:10V

element14 APAC