Diodes Inc. ZTX649
In Stock
Technical Specifications
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Weight453.59237 mg
Technical
Collector Base Voltage (VCBO)35 V
Collector Emitter Breakdown Voltage25 V
Collector Emitter Saturation Voltage230 mV
Collector Emitter Voltage (VCEO)25 V
Continuous Collector Current2 A
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency240 MHz
Gain Bandwidth Product240 MHz
Max Collector Current2 A
Max Operating Temperature200 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1 W
Transition Frequency240 MHz
Voltage Rating (DC)25 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
Inventory History
3 month trend: -42.49%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Documents
Download datasheets and manufacturer documentation for Diodes Inc. ZTX649.
Newark
Diodes Inc SCT
Future Electronics
Engineering Resources
View Evaluation kits and Reference designs for Diodes Inc. ZTX649.
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Descriptions
Descriptions of Diodes Inc. ZTX649 provided by its distributors.
ZTX649 Series NPN 2 A 25 V Silicon Planar Medium Power Transistor - TO-92-3
Trans GP BJT NPN 25V 2A 1000mW 3-Pin E-Line
Pwr Mid Perf Transistor Ep3Sc Bulk 4K
TRANSISTOR, NPN, E-LINE; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:25V; Transition Frequency Typ ft:240MHz; Power Dissipation Pd:1W; DC Collector Current:2A; DC Current Gain hFE:200; Transistor Case Style:E-Line; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:500mV; Continuous Collector Current Ic Max:2A; Current Ic @ Vce Sat:2A; Current Ic Continuous a Max:2A; Current Ic hFE:1A; Gain Bandwidth ft Min:150MHz; Gain Bandwidth ft Typ:240MHz; Hfe Min:100; No. of Transistors:1; Package / Case:E-Line; Pin Configuration:e; Power Dissipation Pd:1W; Power Dissipation Ptot Max:1W; Termination Type:Through Hole; Voltage Vcbo:35V
Manufacturer Aliases
Diodes Inc. has several brands around the world that distributors may use as alternate names. Diodes Inc. may also be known as the following names:
- Diodes Incorporated
- DIODE
- DII
- DIO
- DIODE INC
- DC COMPONENTS
- DIOD
- YENYO
- Diodes Zetex
- MICRO COM
- MICRO ELECTRONIC INS
- Diodes Inc / Zetex
- DIODE INCORPORATED
- DIODES ZET
- DIODSE
- DINC
- Diodes Inc Inc
- DIOINC
- FORMOSA MS
- DIODES INC(RoHS)
- ZETEX (DIODES INC)
- DIODES INC/VISHAY
- Diodes Incorporation
- ZETEXDIODES
- DIODES INC/VISH
Inventory History
3 month trend: -42.49%
CAD Models
Download symbol, footprint, and 3D STEP
Alternate Parts
0 parts available
Technical Specifications
Physical
Case/PackageTO-92
MountThrough Hole
Number of Pins3
Weight453.59237 mg
Technical
Collector Base Voltage (VCBO)35 V
Collector Emitter Breakdown Voltage25 V
Collector Emitter Saturation Voltage230 mV
Collector Emitter Voltage (VCEO)25 V
Continuous Collector Current2 A
Current Rating2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)5 V
Frequency240 MHz
Gain Bandwidth Product240 MHz
Max Collector Current2 A
Max Operating Temperature200 °C
Max Power Dissipation1 W
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
PolarityNPN
Power Dissipation1 W
Transition Frequency240 MHz
Voltage Rating (DC)25 V
Dimensions
Height4.01 mm
Length4.77 mm
Width2.41 mm
Documents
Download datasheets and manufacturer documentation for Diodes Inc. ZTX649.
Newark
Diodes Inc SCT
Future Electronics
Compliance
Environmental Classification
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCNo SVHC
RoHSCompliant
Compliance Statements