描述
由其分销商提供的 Vishay SQ4080EY-T1_GE3 的描述。
Transistor MOSFET N-CH 150V 18A 8-Pin SOIC
N-CHANNEL 150-V (D-S) 175C MOSFET
Automotive Dual N-Channel 20 V (D-S) 175 C MOSFET
Power Field-Effect Transistor, 18A I(D), 150V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, AEC-Q101, N-CH, 150V, SOIC; Transistor Polarity: N Channel; Continuous Drain Current Id: 18A; Drain Source Voltage Vds: 150V; On Resistance Rds(on): 0.07ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 7.1W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: TrenchFET Series; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (12-Jan-2017)
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- VISHA
- Vishay Intertechnology
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
Contact PlatingTin
Number of Terminals8
Technical
Continuous Drain Current (ID)18 A
Drain to Source Breakdown Voltage150 V
Drain to Source Resistance85 mΩ
Drain to Source Voltage (Vdss)150 V
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation7.1 W
Min Breakdown Voltage150 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation7.1 W
Schedule B8541290080
Turn-Off Delay Time19.1 ns
Turn-On Delay Time11.4 ns
Dimensions
Height1.75 mm