Yageo Group XP60SL115DR

Name: Yageo Group XP60SL115DR
Brand: Yageo Group
SKU: XP60SL115DR

Power MOSFET, N Channel, 600 V, 28 A, 0.115 ohm, TO-262, Through Hole

$ 1.867

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Distributor	SKU		Min	Pkg
Newark	XP60SL115DR	198	1		4.210	3.690	2.710	2.260	2.260
Arrow Electronics	XP60SL115DR	3,000	1		1.776	1.776	1.685	1.597	1.597
DigiKey	5048-XP60SL115DR-ND	988	1	Tube	4.460	4.460	2.084	1.935	1.935
Avnet	XP60SL115DR	0	3K						1.739	3d
Farnell	XP60SL115DR	198	1		3.853*	2.001*	1.798*	1.798*	1.798*	7h

数据表和文档

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Farnell

Datasheet7 页0 年前

库存历史记录

3 个月趋势:

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供应链

Country of OriginMainland China, Taiwan

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2024-03-07

Lifecycle StatusProduction (Last Updated: 3 months ago)

描述

由其分销商提供的 Yageo Group XP60SL115DR 的描述。

Power MOSFET, N Channel, 600 V, 28 A, 0.115 ohm, TO-262, Through Hole

Avnet

Power Field-Effect Transistor

IHS

MOSFET, N-CH, 600V, 28A, TO-262;

Farnell

MOSFET, N-CH, 600V, 28A, TO-262; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:28A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:5V RoHS Compliant: Yes

Newark