Yageo Group XP3N9R5AMT

Name: Yageo Group XP3N9R5AMT
Brand: Yageo Group
SKU: XP3N9R5AMT

Power Field-Effect Transistor, 38.7A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

$ 0.176

Production

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor		SKU		Min	Pkg
Newark		XP3N9R5AMT	2,970	5	Cut Tape		0.465	0.322	0.223	0.223
Arrow Electronics		XP3N9R5AMT	3,000	3			0.184	0.089	0.087	0.087
DigiKey		5048-XP3N9R5AMTCT-ND	996	1	Cut Tape	0.580	0.359	0.228	0.172	0.172
Avnet		XP3N9R5AMT	0	3K						0.095	3d
Farnell	2	XP3N9R5AMT	2,970	5	Cut Tape		0.342*	0.219*	0.139*	0.139*	15h

数据表和文档

下载 Yageo Group XP3N9R5AMT 的数据表和制造商文档。

Farnell

Datasheet8 页0 年前

库存历史记录

3 个月趋势:

+0.00%

Powered by

供应链

Country of OriginMainland China, Taiwan

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2024-03-04

Lifecycle StatusProduction (Last Updated: 2 months ago)

描述

由其分销商提供的 Yageo Group XP3N9R5AMT 的描述。

Power Field-Effect Transistor, 38.7A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET, N-CH, 30V, 38.7A, PMPAK;

Farnell

N-CH SINGLE 30V PMPAK5X6

TTI Europe

MOSFET, N-CH, 30V, 38.7A, PMPAK; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:38.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Newark