供应链
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusPRODUCTION (Last Updated: 5 years ago)
相关零件
ROHMBSM180D12P2C101
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 204 A, 1.2 kV, Module, 10 Pins
描述
由其分销商提供的 Wolfspeed CAS120M12BM2 的描述。
1200-V; 13.0-mΩ; Silicon Carbide; Half-Bridge Module
Wolfspeed
Trans MOSFET N-CH SiC 1.2KV 200A 7-Pin Box
MOSFET, DUAL N-CH, 1.2KV, 193A ROHS COMPLIANT: YES
Dual N-chan SiC MOSFET Module 1200V 138A
MOSFET 2N-CH 1200V 120A MODULE
Power Field-Effect Transistor, 1200V, 0.016ohm, 2-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET
Wolfspeed NMOS, Vds=1200 V, 193 A, , , 7
SiC Power Module, 1200 V, 120 A, RoHS
Wolfspeed SCT
MOSFET, DUAL N-CH, 1.2KV, 193A, MODULE; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 193A; Drain Source Voltage Vds: 1.2kV; On Resistance Rds(; Available until stocks are exhausted Alternative available
制造商别名
Wolfspeed 在全球拥有多个品牌，分销商可将其用作替代名称。Wolfspeed 也可称为以下名称：
- Wolfspeed Inc
- Cree/Wolfspeed
- Wolfspeed - a Cree company
- Wolfspeed / Cree
- WOLFSPEED INC (CREE)
- WOLFSOn semi
技术规格
Physical
Case/PackageModule
Number of Terminals7
Technical
Continuous Drain Current (ID)120 A
Current Rating120 A
Drain to Source Breakdown Voltage1.2 kV
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)1.2 kV
Gate to Source Voltage (Vgs)20 V
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation925 W
Min Breakdown Voltage1.2 kV
Min Operating Temperature-40 °C
Number of Channels2
Number of Elements2
Schedule B8541290080
Threshold Voltage2.6 V
Dimensions
Height31.3 mm
Length106.4 mm
Width61.4 mm